CXMT Reportedly Plans Second Fab in Beijing to Boost DRAM Output

Chinese memory maker CXMT is planning a second DRAM fab in Beijing amid high demand for its memory products. According to Reuters, the Chinese memory giant is considering building this second fab and is already in talks to secure funding for the project. As CXMT aims to boost its manufacturing output, measured in DRAM wafers per month (WPM), the company needs to secure new funding and is reportedly backed by the local government to increase production. While the project details are currently unknown, building a modern DRAM fab can cost over $10 billion, meaning CXMT will likely require significant funds to get started.

Currently, CXMT operates two 12-inch fabs, one in Hefei and one in Beijing, with each fab having an output of about 100,000 WPM. This means the current output capacity is around 200,000 wafers per month, with plans to triple that number to an astonishing 600,000 WPM when the Shanghai and Hefei plants are completed and fully operational. We have already reported that CXMT will end the year 2026 with about 350,000 WPM of DRAM output, just behind Micron's 375,000 DRAM WPM output.